EU Product - Memory 1GB, DDR2, M470T2864EH3-CF7 Neuware - 1 GB - DDR2

Introduction

Samsung Memory 1GB, DDR2, M470T2864EH3-CF7 Neuware - 1 GB - DDR2 - 200-Pin - 800 MHz - non-ECC - SO-DIMM - CL6

Specifications

Power
Memory voltage	1.8 V
Memory
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 1 GB
Internal memory	1 GB
Component for	Laptop
Memory form factor	200-pin SO-DIMM
CAS latency	6
Memory voltage	1.8 V
Memory ranking	2
ECC	No
Memory clock speed	800 MHz
Internal memory type	DDR2
Features
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 1 GB
Internal memory	1 GB
Component for	Laptop
Memory form factor	200-pin SO-DIMM
CAS latency	6
Memory voltage	1.8 V
Memory ranking	2
ECC	No
Memory clock speed	800 MHz
Internal memory type	DDR2