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SAMSUNG M378A1K43EB2-CWE SAMSUNG EU Product - Memory Module 8 G 1 X 8 G

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EU Product - Memory Module 8 G 1 X 8 G

Introduction

Unbuffered DIMM
No buffer or register : smaller latency value Supports x8 / x16 Organization / up to 2 ranks per DIMM and 2DPC configuration Application : Desktop

Specifications

Power
Memory voltage1.2 V
Technical details
Chips organisation1Rx8
Memory
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC
Memory form factor288-pin DIMM
CAS latency22
Memory voltage1.2 V
Module configuration1024M x 8
ECCNo
Memory clock speed3200 MHz
Internal memory typeDDR4
Features
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC
Memory form factor288-pin DIMM
CAS latency22
Memory voltage1.2 V
Module configuration1024M x 8
ECCNo
Memory clock speed3200 MHz
Internal memory typeDDR4
Other features
Chips organisation1Rx8